Composition and process for selectively etching metal nitrides
US9831088B2 · kind B2 · utility
9Cited by
67References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2011 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | May 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.