Interconnect structure having substractive etch feature and damascene feature

US9852980B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Griselda Bonilla · Hopewell Junction, US
• Samuel S. Choi · Hopewell Junction, US
• Ronald G. Filippi · Wappingers Falls, US
• Elbert E. Huang · Carmel, US
• Naftali E. Lustig · Ossining, US
• Andrew H. Simon · Fishkill, US

Key dates

• Filing date: Jan 13, 2017
• Grant date: Dec 26, 2017
• Expiry date: Jan 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53266
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming an interconnect structure include depositing a first conductive material on a substrate. Aspects include subtractively etching the conductive material to form a patterned first conductive layer, and depositing a dielectric layer on interconnect structure. Aspects also include depositing a second conductive material on the dielectric layer and removing the second conductive material through the top of the second metal liner.