Semiconductor device with a reduced band gap zone

US9859272B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Holger Huesken · Munich, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Frank Pfirsch · Birkenfeld, DE
• Roman Roth · Sattendorf, AT
• Christian Philipp Sandow · Haar, DE
• Carsten Schaeffer · Annenheim, AT
• Stephan Voss · Munich, DE

Key dates

• Filing date: Jul 14, 2016
• Grant date: Jan 2, 2018
• Expiry date: Jul 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

A semiconductor device comprising a source region being electrically connected to a first load terminal (E) of the semiconductor device and a drift region comprising a first semiconductor material (M1) having a first band gap, the drift region having dopants of a first conductivity type and being configured to carry at least a part of a load current between the first load terminal (E) and a second load terminal (C) of the semiconductor device, is presented. The semiconductor device further comprises a semiconductor body region having dopants of a second conductivity type complementary to the first conductivity type and being electrically connected to the first load terminal (E), a transition between the semiconductor body region and the drift region forming a pn-junction, wherein the pn-junction is configured to block a voltage applied between the first load terminal (E) and the second load terminal (C). The semiconductor body region isolates the source region from the drift region and includes a reduced band gap zone comprising a second semiconductor material (M2) having a second band gap that is smaller than the first band gap, wherein the reduced band gap zone is arranged in the…