Semiconductor structure and manufacturing method for the same
US9876116B2 · kind B2 · utility
0Cited by
6References
12Claims
0Family size
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Key dates
| Filing date | Jun 8, 2017 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Jun 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.