Forming defect-free relaxed SiGe fins

US9882052B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Robert Judson Holt · Ballston Lake, US
• Jinping Liu · Ballston Lake, US
• Jody A. Fronheiser · Delmar, US
• Bharat Krishnan · Mechanicville, US
• Churamani Gaire · Clifton Park, US
• Timothy J. McArdle · Ballston Lake, US
• Murat Kerem Akarvardar · Saratoga Springs, US

Key dates

• Filing date: Jun 30, 2016
• Grant date: Jan 30, 2018
• Expiry date: Jun 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26506
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming defect-free relaxed SiGe fins is provided. Embodiments include forming fully strained defect-free SiGe fins on a first portion of a Si substrate; forming Si fins on a second portion of the Si substrate; forming STI regions between adjacent SiGe fins and Si fins; forming a cladding layer over top and side surfaces of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate; recessing the STI regions on the first portion of the Si substrate, revealing a bottom portion of the SiGe fins; implanting dopant into the Si substrate below the SiGe fins; and annealing.