Ultra-low drain-source resistance power MOSFET

US9887266B2 · kind B2 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• The-Tu Chau · San Jose, US
• Sharon Shi · San Jose, US
• Qufei Chen · San Jose, US
• Martin Hernandez · San Jose, US
• Deva Pattanayak · Saratoga, US
• Kyle Terrill · Santa Clara, US
• Kuo-In Chen · Los Altos, US

Key dates

• Filing date: Feb 11, 2008
• Grant date: Feb 6, 2018
• Expiry date: Feb 11, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834

Abstract

Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial layer. The first epitaxial layer is formed adjacent and contiguous to a substrate highly doped with red Phosphorus. The novel red Phosphorus doped substrate enables a desirable low drain-source resistance.