Particle generation suppresor by DC bias modulation
US9892888B2 · kind B2 · utility
23Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2017 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | May 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a first electrode and a second electrode of the processing chamber by applying a radio frequency (RF) power to the first electrode during an etch process, wherein the first electrode is disposed above the second electrode, and the second electrode is disposed above and opposing a substrate support having a substrate supporting surface, and applying a constant zero DC bias voltage to the first electrode during the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.