Patent · US Active

Method of dicing a wafer and semiconductor chip

US9911655B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Brunnbauer · Lappersdorf, DE
Bernhard Drummer · Tegernheim, DE
Korbinian Kaspar · Regensburg, DE
Gunther Mackh · Dresden, DE

Key dates

Filing date	Dec 27, 2016
Grant date	Mar 6, 2018
Priority date	—
Expiry date	Dec 27, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/6834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. The method may further include processing a remaining portion of the wafer in the separation region to separate the wafer into individual chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.