Wide bandgap semiconductor device

US9923066B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Daniel Kueck · Villach, AT
• Thomas Aichinger · Faak am See, AT
• Franz Hirler · Isen, DE
• Anton Mauder · Kolbermoor, DE

Key dates

• Filing date: Jul 27, 2016
• Grant date: Mar 20, 2018
• Expiry date: Jul 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device includes a source zone electrically connected to a first load terminal, a contiguous zone isolating the source zone from a drift zone, and a trench extending into a semiconductor body along a vertical direction and including a first electrode electrically connected to a control terminal and an insulator in contact with the contiguous zone and which isolates the first electrode from the semiconductor body. The insulator has, at a trench bottom region, a first thickness along the vertical direction, and, at a trench top region, a second thickness along a lateral direction, the first thickness being greater than the second thickness by a factor of at least 1.5. The contiguous zone is arranged in contact with the insulator and extends further along the vertical direction than the trench, and the trench bottom region and the contiguous zone overlap along the lateral direction.