Self aligned pattern formation post spacer etchback in tight pitch configurations
US9934970B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2017 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Jan 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.