Patent · US Active

Super-resolution imaging photolithography

US9958784B2 · kind B2 · utility

2Cited by

0References

22Claims

0Family size

Assignee

Institute of Optics and Electronics, Chinese Academy of Sciences · CN

Inventors

Xiangang Luo · Fremont, US
Changtao WANG · Sichuan, CN
Zeyu Zhao · Sichuan, CN
Yanqin WANG · Sichuan, CN
Mingbo Pu · Chengdu, CN
Na YAO · Chengdu, CN
Ping Gao · Hong Kong, CN
Chenggang HU · Chengdu, CN
Xiong Li · Allen, US
Cheng-Hsuan Huang · New Taipei, TW
Leilei Yang · Lianyungang, CN
Liqin LIU · Chengdu, CN
Jiong Wang · Union City, US
Jiayu HE · Beijing, CN
Yunfei Luo · Sichuan, CN
Kaipeng Liu · Izumi, JP
Chengwei Zhao · Sichuan, CN
Ling Liu · Shanghai, CN
Xiaoliang Ma · Port Matilda, US
Min Wang · San Diego, US

Key dates

Filing date	Sep 23, 2014
Grant date	May 1, 2018
Priority date	—
Expiry date	Sep 23, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70325
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may include an illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP) wave illumination mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.