Patent · US Active

Method for doping source and drain regions of a transistor by means of selective amorphisation

US9966453B2 · kind B2 · utility

2Cited by

2References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Shay Reboh · Grenoble, FR
Perrine Batude · Dijon, FR
Frédéric Mazen · Grenoble, FR
Benoit Sklenard · Grenoble, FR

Key dates

Filing date	Apr 6, 2016
Grant date	May 8, 2018
Priority date	—
Expiry date	May 19, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/26513
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method including the steps consisting in:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.