Fin patterns with varying spacing without fin cut
US9991117B2 · kind B2 · utility
2Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2017 |
| Grant date | Jun 5, 2018 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor fins include forming first spacers on a first sidewall of each of a plurality of mandrels using an angled deposition process. A second sidewall of one or more of the plurality of mandrels is masked. Second spacers are formed on a second sidewall of all unmasked mandrels. The second sidewall of the one or more of the plurality of mandrels is unmasked. The mandrels are etched away. Fins are formed from a substrate using the first and second spacers as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.