Magnetoresistive stack and method of fabricating same
USRE50331E1 · kind E1 · reissue
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2022 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Apr 8, 2042 |
Classification
- Technology area (CPC —)General
Abstract
A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.