INVOX TECHNOLOGY
15Patents
0Active
15Granted
30Portfolio score
Filing activity: Sep 28, 1995 → Mar 4, 1999
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5943283A | Address scrambling in a semiconductor memory | Physics | 228 | Expired |
| US5909449A | Multibit-per-cell non-volatile memory with error detection and correction | Physics | 219 | Expired |
| US5969986A | High-bandwidth read and write architectures for non-volatile memories | Physics | 202 | Expired |
| US5748534A | Feedback loop for reading threshold voltage | Physics | 190 | Expired |
| US5745409A | Non-volatile memory with analog and digital interface and storage | Physics | 92 | Expired |
| US6038166A | High resolution multi-bit-per-cell memory | Physics | 88 | Expired |
| US5818757A | Analog and multi-level memory with reduced program disturb | Physics | 88 | Expired |
| US6094368A | Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories | Physics | 72 | Expired |
| US5801980A | Testing of an analog memory using an on-chip digital input/output interface | Physics | 69 | Expired |
| US5896340A | Multiple array architecture for analog or multi-bit-cell memory | Physics | 67 | Expired |
| US6058060A | Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio | Physics | 65 | Expired |
| US5923585A | Source biasing in non-volatile memory having row-based sectors | Physics | 36 | Expired |
| US5949716A | Look-ahead erase for sequential data storage | Physics | 30 | Expired |
| US5815425A | Combined digital write and analog rewrite process for non-volatile memory | Physics | 29 | Expired |
| US5909387A | Memory architecture for recording of multiple messages | Physics | 25 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.