Arnaud Pouydebasque
8Patents
3h-index
12Co-inventors
50Inventor score
Filing activity: Mar 5, 2007 → Apr 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8013399B2 | SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable | Electricity | 228 | Active |
| US7923315B2 | Manufacturing method for planar independent-gate or gate-all-around transistors | Electricity | 28 | Active |
| US7687356B2 | Formation of shallow siGe conduction channel | Electricity | 10 | Active |
| US7960255B2 | Process for forming a wire portion in an integrated electronic circuit | Emerging Cross-Sectional Technologies | 2 | Active |
| US12222491B2 | Electrostatic actuation for diffractive optical devices | Physics | 0 | Active |
| US8551352B2 | Method for producing a device with a fluid-encapsulating membrane | Physics | 0 | Active |
| US11550163B2 | Tunable blazed grating | Physics | 0 | Active |
| US12393032B2 | Electronic devices with liquid lenses | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.