Dharmendra Kumar Rai
9Patents
2h-index
17Co-inventors
44Inventor score
Filing activity: Nov 18, 2011 → Nov 3, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9251889B2 | Area-efficient, high-speed, dynamic-circuit-based sensing scheme for dual-rail SRAM memories | Physics | 4 | Active |
| US8811070B1 | Write-tracking circuitry for memory devices | Physics | 2 | Active |
| US9281055B2 | Memory sense amplifier and column pre-charger | Physics | 2 | Active |
| US9111637B1 | Differential latch word line assist for SRAM | Physics | 1 | Active |
| US9424900B2 | Area-efficient process-and-temperature-adaptive self-time scheme for performance and power improvement | Physics | 1 | Active |
| US8462562B1 | Memory device with area efficient power gating circuitry | Physics | 1 | Active |
| US9275686B2 | Memory banks with shared input/output circuitry | Physics | 1 | Active |
| US11798600B2 | Read accelerator circuit | Physics | 0 | Active |
| US9584123B2 | Systems and methods for voltage level shifting in a device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.