High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process
US10763090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2016 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Oct 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.