Inventor · Tokyo, JP

Hirosuke Narai

12Patents
2h-index
11Co-inventors
43Inventor score

Filing activity: Feb 24, 2016 → Aug 29, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10621034B2 Memory device that changes a writable region of a data buffer based on an operational state of an ECC circuit Physics 2 Active
US9959937B2 Memory system including test circuit Physics 2 Active
US9728275B2 Memory system that handles access to bad blocks Physics 2 Active
US9891987B2 Memory device that communicates error correction results to a host Physics 2 Active
US10289482B2 Memory device that updates parameters transmitted to a host based on operational settings Physics 2 Active
US10769011B2 Memory device that changes a writable region of a data buffer based on an operational state of an ECC circuit Physics 1 Active
US9747994B2 Memory system Electricity 0 Active
US10235070B2 Memory system having a semiconductor memory device with protected blocks Physics 0 Active
US9620230B2 Memory device that performs an advance reading operation Physics 0 Active
US10445174B2 Memory device that communicates error correction results to a host Physics 0 Active
US10310755B2 Memory system having a semiconductor memory device with protected blocks Physics 0 Active
US11892503B2 Semiconductor device and test method of semiconductor device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.