Inventor · Hubei, CN

Jin Wen Dong

15Patents
3h-index
26Co-inventors
49Inventor score

Filing activity: Jul 26, 2018 → Sep 2, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US11133325B2 Memory cell structure of a three-dimensional memory device Electricity 11 Active
US10515975B1 Method for forming dual-deck channel hole structure of three-dimensional memory device Electricity 6 Active
US10867678B2 Three-dimensional memory devices Electricity 5 Active
US10840125B2 Memory structure and method for forming the same Electricity 3 Active
US10644015B2 Memory cell structure of a three-dimensional memory device Electricity 3 Active
US10497708B1 Memory structure and forming method thereof Electricity 2 Active
US10847528B2 Memory cell structure of a three-dimensional memory device Electricity 1 Active
US12063780B2 Memory cell structure of a three-dimensional memory device Electricity 0 Active
US11211393B2 Memory device and forming method thereof Electricity 0 Active
US10910390B2 Memory device and forming method thereof Electricity 0 Active
US11329061B2 Method for improving channel hole uniformity of a three-dimensional memory device Electricity 0 Active
US10892274B2 Three-dimensional memory devices and fabricating methods thereof Electricity 0 Active
US11380701B2 Memory device and forming method thereof Electricity 0 Active
US11271004B2 Memory device and forming method thereof Electricity 0 Active
US10692756B1 Method for forming dual damascene interconnect structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.