Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT

US8183630B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Perrine Batude · Dijon, FR
• Laurent Clavelier · Grenoble, FR
• Marie-Anne Jaud · Grenoble, FR
• Olivier Thomas · Saint-Martin-d'Hères, FR
• Maud Vinet · Voiron, FR

Key dates

• Filing date: May 29, 2009
• Grant date: May 22, 2012
• Expiry date: May 29, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/00

Abstract

A microelectronic device including: a substrate surmounted by a stack of layers, at least one first transistor situated at a given level of said stack, at least one second transistor situated at a second level of said stack, above said given level, the first transistor including a gate electrode situated opposite a channel zone of the second transistor, the first transistor and the second transistor being separated by an insulating zone, and said insulating zone being constituted of several different dielectric materials include a first dielectric material and a second dielectric material.