Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness

US9018024B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Nathaniel Berliner · Albany, US
• Kangguo Cheng · Schenectady, US
• Jason E. Cummings · Smithfield, US
• Toshiharu Furukawa · South Burlington, US
• Jed H. Rankin · South Burlington, US
• Robert R. Robison · Colchester, US
• William R. Tonti · South Burlington, US

Key dates

• Filing date: Oct 22, 2009
• Grant date: Apr 28, 2015
• Expiry date: Nov 29, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/959
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a wafer; determining a removal thickness to be removed at each of the plurality of selected points such that removal of the removal thickness results in a substantially uniform within-wafer semiconductor layer thickness; implanting a species into the wafer at each of the plurality of selected points with at least one of a dose level and an energy level based on the removal thickness for the respective point; and polishing the semiconductor layer to thin the semiconductor layer.