Pauling Chen
9Patents
5h-index
14Co-inventors
60Inventor score
Filing activity: Jul 14, 1999 → Feb 14, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6768679B1 | Selection circuit for accurate memory read operations | Physics | 417 | Expired |
| US6788583B2 | Pre-charge method for reading a non-volatile memory cell | Physics | 7 | Expired |
| US6744674B1 | Circuit for fast and accurate memory read operations | Physics | 6 | Expired |
| US6240017A | Reduction of voltage stress across a gate oxide and across a junction within a high voltage transistor of an erasable memory device | Electricity | 6 | Expired |
| US6771545B1 | Method for reading a non-volatile memory cell adjacent to an inactive region of a non-volatile memory cell array | Physics | 6 | Expired |
| US6885250B1 | Cascode amplifier circuit for generating and maintaining a fast, stable and accurate bit line voltage | Physics | 4 | Expired |
| US6768677B2 | Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage | Physics | 2 | Expired |
| US6275424A | Reduction of voltage stress across a gate oxide and across a junction within a high voltage transistor of an erasable memory device | Electricity | 1 | Expired |
| US11119854B2 | Method of controlling verification operations for error correction of non-volatile memory device, and non-volatile memory device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.