Method for reading a non-volatile memory cell adjacent to an inactive region of a non-volatile memory cell array
US6771545B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2003 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Mar 8, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An array of non-volatile memory cells includes active columns of cells wherein a data pattern may be stored adjacent to damaged or inactive columns wherein data is not stored. A method of storing a data pattern and reproducing the data pattern within such an array comprises storing a charge within a selected plurality of the memory cells within the active column. The selected plurality of memory cells represents a portion of the data pattern. An inactive memory cell programming pattern is identified. The inactive memory cell programming pattern identifies all, or a selected plurality, of the memory cells in the inactive column in which a charge is to be stored for the purpose of periodically storing a charge in the memory cells first inactive column to prevent over erasure, during bulk erase, and leakage from the inactive cells to adjacent active cells. A charge is stored on the selected plurality of the memory cells in the first inactive column. The data pattern is reproduced reading each memory cell within the first active column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.