Advanced multilayer dielectric cap with improved mechanical and electrical properties

US7737052B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Advanced Micro Devices, Inc. · US
• Applied Materials, Inc. · US

Inventors

• Ritwik Bhatia · Sunnyvale, US
• Griselda Bonilla · Hopewell Junction, US
• Alfred Grill · White Plains, US
• Joshua L. Herman · Troy, US
• Son V. Nguyen · Irvine, US
• E. Todd Ryan · Clifton Park, US
• Hosadurga Shobha · Armonk, US

Key dates

• Filing date: Mar 5, 2008
• Grant date: Jun 15, 2010
• Expiry date: Oct 2, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02348
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.