Magnetic element with improved out-of-plane anisotropy for spintronic applications
US9006704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2011 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jun 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/40
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.