Ryan Meyer
13Patents
3h-index
26Co-inventors
52Inventor score
Filing activity: Apr 19, 2016 → Jan 3, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10388665B1 | Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack | Electricity | 38 | Active |
| US10014309B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 30 | Active |
| US10263007B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 11 | Active |
| US11094627B2 | Methods used in forming a memory array comprising strings of memory cells | Electricity | 2 | Active |
| US10157933B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 2 | Active |
| US11563011B2 | Integrated circuitry, memory circuitry, method used in forming integrated circuitry, and method used in forming memory circuitry | Electricity | 1 | Active |
| US10720446B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US11937429B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US10727242B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 0 | Active |
| US11244955B2 | Memory arrays and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US10586807B2 | Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks | Electricity | 0 | Active |
| US11239252B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US11792991B2 | Memory arrays and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.