Stefan Lai
8Patents
7h-index
13Co-inventors
60Inventor score
Filing activity: Nov 21, 1988 → Mar 13, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6512241B1 | Phase change material memory device | Electricity | 414 | Expired |
| US6881603B2 | Phase change material memory device | Electricity | 94 | Expired |
| US5210047A | Process for fabricating a flash EPROM having reduced cell size | Emerging Cross-Sectional Technologies | 83 | Expired |
| US4957877A | Process for simultaneously fabricating EEPROM cell and flash EPROM cell | Electricity | 37 | Expired |
| US5229311A | Method of reducing hot-electron degradation in semiconductor devices | Electricity | 34 | Expired |
| US5106772A | Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide | Electricity | 23 | Expired |
| US7050320B1 | MEMS probe based memory | Physics | 12 | Expired |
| US7808807B2 | Method and apparatus for accessing a multi-mode programmable resistance memory | Physics | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.