Sze-Hon Kwan
7Patents
7h-index
8Co-inventors
48Inventor score
Filing activity: Jul 24, 1992 → Apr 15, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5567634A | Method of fabricating self-aligned contact trench DMOS transistors | Electricity | 163 | Expired |
| US5665619A | Method of fabricating a self-aligned contact trench DMOS transistor structure | Electricity | 114 | Expired |
| US5532179A | Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof | Electricity | 90 | Expired |
| US5316959A | Trenched DMOS transistor fabrication using six masks | Electricity | 87 | Expired |
| US5879994A | Self-aligned method of fabricating terrace gate DMOS transistor | Emerging Cross-Sectional Technologies | 83 | Expired |
| US5468982A | Trenched DMOS transistor with channel block at cell trench corners | Electricity | 59 | Expired |
| US5910669A | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof | Electricity | 39 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.