Walter Di Francesco
38Patents
3h-index
72Co-inventors
62Inventor score
Filing activity: May 5, 2008 → May 23, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11177014B1 | Global-local read calibration | Physics | 7 | Active |
| US7848158B2 | Methods and apparatuses for programming flash memory using modulated pulses | Physics | 6 | Active |
| US9076547B2 | Level compensation in multilevel memory | Physics | 4 | Active |
| US10593412B2 | Using a status indicator in a memory sub-system to detect an event | Physics | 3 | Active |
| US10854305B2 | Using a status indicator in a memory sub-system to detect an event | Physics | 1 | Active |
| US11908523B2 | Express programming using advanced cache register release in a memory sub-system | Physics | 1 | Active |
| US11416154B2 | Partially written block treatment | Physics | 1 | Active |
| US10423350B2 | Partially written block treatment | Physics | 1 | Active |
| US9620236B2 | Level compensation in multilevel memory | Physics | 1 | Active |
| US12340851B2 | Memories for performing successive programming operations | Physics | 0 | Active |
| US9639420B2 | High performance memory controller | Electricity | 0 | Active |
| US11842078B2 | Asynchronous interrupt event handling in multi-plane memory devices | Physics | 0 | Active |
| US11977748B2 | Prioritized power budget arbitration for multiple concurrent memory access operations | Emerging Cross-Sectional Technologies | 0 | Active |
| US12393249B2 | Peak power management with data window reservation | Emerging Cross-Sectional Technologies | 0 | Active |
| US12327595B2 | Shortened single-level cell memory programming | Physics | 0 | Active |
| US12205653B2 | Wordline or pillar state detection for faster read access times | Physics | 0 | Active |
| US12001336B2 | Hybrid parallel programming of single-level cell memory | Physics | 0 | Active |
| US12183407B2 | Setting switching for single-level cells | Physics | 0 | Active |
| US12068034B2 | Two-pass corrective programming for memory cells that store multiple bits and power loss management for two-pass corrective programming | Physics | 0 | Active |
| US10877679B2 | Partially written block treatment | Physics | 0 | Active |
| US12393526B2 | NAND page buffer based security operations | Physics | 0 | Active |
| US12189949B2 | Bit error management in memory devices | Physics | 0 | Active |
| US11636908B2 | Global-local read calibration | Physics | 0 | Active |
| US10055293B2 | High performance memory controller | Electricity | 0 | Active |
| US12007912B2 | NAND page buffer based security operations | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.