Won-Suk Yang
38Patents
10h-index
43Co-inventors
75Inventor score
Filing activity: Oct 26, 1990 → Feb 12, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5267152A | Non-invasive method and apparatus for measuring blood glucose concentration | Human Necessities | 305 | Expired |
| US5296410A | Method for separating fine patterns of a semiconductor device | Emerging Cross-Sectional Technologies | 46 | Expired |
| US8354579B2 | Music linked photocasting service system and method | Physics | 30 | Active |
| US5358893A | Isolation method for semiconductor device | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6350649B1 | Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof | Electricity | 26 | Expired |
| US6764941B2 | Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof | Electricity | 24 | Expired |
| US6787906B1 | Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region | Electricity | 23 | Expired |
| US9492379B2 | Quickly soluble oral film dosage containing steviosides as a unpleasant taste masking agent | Human Necessities | 18 | Active |
| US6573545B2 | Semiconductor memory device for eliminating floating body effect and method of fabricating the same | Electricity | 12 | Expired |
| US6337267B1 | Method for fabricating a semiconductor memory device and the structure thereof | Electricity | 10 | Expired |
| US6136657A | Method for fabricating a semiconductor device having different gate oxide layers | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6518671B1 | Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof | Electricity | 9 | Expired |
| US6836019B2 | Semiconductor device having multilayer interconnection structure and manufacturing method thereof | Electricity | 9 | Expired |
| US6531758B2 | Semiconductor integrated circuit with resistor and method for fabricating thereof | Electricity | 8 | Expired |
| US6656791B2 | Semiconductor integrated circuit with resistor and method for fabricating thereof | Electricity | 6 | Expired |
| US6953959B2 | Integrated circuit devices including self-aligned contacts with increased alignment margin | Electricity | 6 | Expired |
| US6806140B1 | Semiconductor memory device for eliminating floating body effect and method of fabricating the same | Electricity | 3 | Expired |
| US7888198B1 | Method of fabricating a MOS transistor with double sidewall spacers in a peripheral region and single sidewall spacers in a cell region | Electricity | 3 | Expired |
| US6812572B2 | Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof | Electricity | 2 | Expired |
| US7510963B2 | Semiconductor device having multilayer interconnection structure and manufacturing method thereof | Electricity | 2 | Expired |
| US10467062B1 | Systems and methods for managing application programming interface information | Physics | 2 | Active |
| US10677806B2 | Composition for diagnosing follicular thyroid carcinoma using expression level of aminoacyl-tRNA synthetase-related protein and method for detecting diagnostic marker | Physics | 1 | Active |
| US8049618B2 | Indoor location system having sensor and method for checking location using the same | Physics | 1 | Active |
| US6855590B2 | Method of manufacturing the semiconductor device intended to prevent a leakage current from occuring due to a gate induced drain leakage effect | Electricity | 1 | Expired |
| US6699762B2 | Methods of fabricating integrated circuit devices with contact hole alignment | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.