Yi-Ann Chen
11Patents
11h-index
8Co-inventors
54Inventor score
Filing activity: Dec 15, 2017 → Mar 6, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10304881B1 | CMOS image sensor with buried superlattice layer to reduce crosstalk | Electricity | 48 | Active |
| US10367028B2 | CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice | Electricity | 43 | Active |
| US10608043B2 | Method for making CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice | Electricity | 41 | Active |
| US10529768B2 | Method for making CMOS image sensor including pixels with read circuitry having a superlattice | Electricity | 40 | Active |
| US10461118B2 | Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk | Electricity | 40 | Active |
| US10529757B2 | CMOS image sensor including pixels with read circuitry having a superlattice | Electricity | 40 | Active |
| US10608027B2 | Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice | Electricity | 40 | Active |
| US10396223B2 | Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk | Electricity | 40 | Active |
| US10355151B2 | CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk | Electricity | 40 | Active |
| US10615209B2 | CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice | Electricity | 40 | Active |
| US11075078B1 | Method for making a semiconductor device including a superlattice within a recessed etch | Electricity | 17 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.