Younsung Choi
13Patents
1h-index
8Co-inventors
43Inventor score
Filing activity: Sep 23, 2010 → Jul 17, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9812452B2 | Method to form silicide and contact at embedded epitaxial facet | Electricity | 3 | Active |
| US10026837B2 | Embedded SiGe process for multi-threshold PMOS transistors | Electricity | 1 | Active |
| US9735159B2 | Optimized layout for relaxed and strained liner in single stress liner technology | Electricity | 1 | Active |
| US10734290B2 | Poly gate extension design methodology to improve CMOS performance in dual stress liner process flow | Electricity | 0 | Active |
| US8438526B2 | Method for minimizing transistor and analog component variation in CMOS processes through design rule restrictions | Physics | 0 | Active |
| US10559469B2 | Dual pocket approach in PFETs with embedded SI-GE source/drain | Electricity | 0 | Active |
| US11251093B2 | Poly gate extension design methodology to improve CMOS performance in dual stress liner process flow | Electricity | 0 | Active |
| US10134643B2 | Poly gate extension design methodology to improve CMOS performance in dual stress liner process flow | Electricity | 0 | Active |
| US10008499B2 | Method to form silicide and contact at embedded epitaxial facet | Electricity | 0 | Active |
| US9496142B2 | Dummy gate placement methodology to enhance integrated circuit performance | Physics | 0 | Active |
| US9583488B2 | Poly gate extension design methodology to improve CMOS performance in dual stress liner process flow | Electricity | 0 | Active |
| US9947765B2 | Dummy gate placement methodology to enhance integrated circuit performance | Physics | 0 | Active |
| US9508601B2 | Method to form silicide and contact at embedded epitaxial facet | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.