Patent · US Active

Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method

US10020270B2 · kind B2 · utility

0Cited by

16References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Helmut Brech · Lappersdorf, DE
Albert Birner · Regensburg, DE
Matthias Zigldrum · Regensburg, DE
Michaela Braun · Regensburg, DE
Jan Ropohl · Regensburg, DE

Key dates

Filing date	Sep 29, 2016
Grant date	Jul 10, 2018
Priority date	—
Expiry date	Sep 29, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate including a front surface, an LDMOS transistor structure in the front surface, a conductive interconnection structure arranged on the front surface, and at least one cavity arranged in the front surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.