Reaction chamber passivation and selective deposition of metallic films

US10041166B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Delphine Longrie · Wondelgem, BE
• Antti Niskanen · Helsinki, FI
• Han Wang · Cromwell, US
• Qi Xie · Wilsele, BE
• Jan Willem Maes · Wilrijk, BE
• Shang Chen · Tokyo, JP
• Toshiharu Watarai · Chofu, JP
• Takahiro Onuma · Tama, JP
• Dai Ishikawa · Ome, JP
• Kunitoshi Namba · Machida, JP

Key dates

• Filing date: Oct 27, 2017
• Grant date: Aug 7, 2018
• Expiry date: Oct 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.