Method and apparatus for selective nitridation process

US10049881B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Matthew S. Rogers · Mountain View, US
• Roger Curtis · Stockton, US
• Lara Hawrylchak · Gilroy, US
• Ken Kaung Lai · Milpitas, US
• Bernard L. Hwang · Santa Clara, US
• Jeffrey Tobin · Mountain View, US
• Christopher S. Olsen · Fremont, US
• Malcolm J. Bevan · Dallas, US

Key dates

• Filing date: Jun 28, 2012
• Grant date: Aug 14, 2018
• Expiry date: Aug 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/35
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.