Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor

US10049921B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Nerissa Draeger · Milpitas, US
• Kaihan Ashtiani · San Jose, US
• Deenesh Padhi · Sunnyvale, US
• Derek Wong · San Jose, US
• Bart J. van Schravendijk · Sunnyvale, US
• George Andrew Antonelli · Portland, US
• Artur Kolics · Dublin, US
• Lie Zhao · Lake Oswego, US
• Patrick A. Van Cleemput · San Jose, US

Key dates

• Filing date: Aug 20, 2014
• Grant date: Aug 14, 2018
• Expiry date: Aug 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76825
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.