Methods for fabricating anode shorted field stop insulated gate bipolar transistor
US10050134B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jun 8, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Aug 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.