Patent · US Active

Semiconductor device including a LDMOS transistor and method

US10050139B2 · kind B2 · utility

0Cited by

17References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Matthias Zigldrum · Regensburg, DE
Michaela Braun · Regensburg, DE
Jan Ropohl · Regensburg, DE

Key dates

Filing date	Jun 24, 2016
Grant date	Aug 14, 2018
Priority date	—
Expiry date	Jun 24, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.