Ultra-conformal carbon film deposition

US10074534B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Swayambhu Prasad Behera · Santa Clara, US
• Shahid Shaikh · Houston, US
• Pramit Manna · Sunnyvale, US
• Mandar B. Pandit · Wilsonville, US
• Tersem Summan · San Jose, US
• Patrick Reilly · Pleasanton, US
• Deenesh Padhi · Sunnyvale, US
• Bok Hoen Kim · San Jose, US
• Heung Lak Park · San Jose, US
• Derek R. Witty · Fremont, US

Key dates

• Filing date: Jun 28, 2017
• Grant date: Sep 11, 2018
• Expiry date: Jun 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.