Forming stacked nanowire semiconductor device

US10074730B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Marc A. Bergendahl · Troy, US
• Kangguo Cheng · Schenectady, US
• Fee Li Lie · Albany, US
• Eric R. Miller · Schenectady, US
• Jeffrey C. Shearer · Albany, US
• John R. Sporre · Albany, US
• Sean Teehan · Rensselaer, US

Key dates

• Filing date: Jan 28, 2016
• Grant date: Sep 11, 2018
• Expiry date: Jan 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device comprises a nanowire arranged over a substrate, a gate stack arranged around the nanowire, a spacer arranged along a sidewall of the gate stack, a cavity defined by a distal end of the nanowire and the spacer, and a source/drain region partially disposed in the cavity and in contact with the distal end of the nanowire.