Pulsed plasma for film deposition
US10096466B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Mar 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.