Patent · US Active

Methods for processing a semiconductor workpiece

US10157765B2 · kind B2 · utility

1Cited by

13References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gudrun Stranzl · Eisenlohrsweg, AT
Martin Zgaga · Rosegg, AT
Rainer Leuschner · Regensburg, DE
Bernhard Goller · Villach, AT
Bernhard Boche · Munich, DE
Manfred Engelhardt · Feldkirchen-Westerham, DE
Hermann Wendt · Grasbrunn, DE
Bernd Noehammer · Villach, AT
Karl Mayer · Villach, AT
Michael Roesner · Villach, AT
Monika Cornelia Voerckel · Villach, AT

Key dates

Filing date	Nov 23, 2016
Grant date	Dec 18, 2018
Priority date	—
Expiry date	Nov 23, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13055
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.