Subtractive etch interconnects

US10177031B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Junjing Bao · Fishkill, US
• Griselda Bonilla · Hopewell Junction, US
• Samuel S. Choi · Hopewell Junction, US
• Ronald G. Filippi · Wappingers Falls, US
• Naftali E. Lustig · Ossining, US
• Andrew H. Simon · Fishkill, US

Key dates

• Filing date: Dec 23, 2014
• Grant date: Jan 8, 2019
• Expiry date: Aug 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming an integrated metal line and interconnect. The method may include forming a first trench in a first ILD exposing a lower metal line, the first ILD is above a substrate, and the lower metal line is in the substrate; forming a first barrier layer in the first trench; forming an integrated metal layer (including a first metal line and a first via) on the first barrier layer; forming a first hardmask on the integrated metal layer; forming an isolation trench in the first hardmask and in the first metal line; forming a second barrier layer in the isolation trench; removing a portion of the second barrier layer from a bottom of the isolation trench exposing the first ILD; and forming a second ILD on the second barrier and in the isolation trench, where a bottom of the second ILD is in the first ILD.