Gas delivery system for high pressure processing chamber
US10179941B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2017 |
| Grant date | Jan 15, 2019 |
| Priority date | — |
| Expiry date | Dec 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6719
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.