Wrap-around contact integration scheme
US10217670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Sep 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide a wrap-around contact integration scheme that includes sidewall protection during contact formation. According to one embodiment, a substrate processing method includes providing a substrate containing raised contacts in a first dielectric film and a second dielectric film above the first dielectric film, depositing a metal-containing film on the second dielectric film, and forming a patterned metal-containing film by etching mask openings in the metal-containing film. The method further includes anisotropically etching recessed features in the second dielectric film above the raised contacts using the patterned metal-containing film as a mask, where the anisotropically etching forms a metal-containing sidewall protection film by redeposition of a portion of the patterned metal-containing film on sidewalls of the recessed features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.