Wrap-around contacts formed with multiple silicide layers

US10276442B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ruilong Xie · Niskayuna, US
• Julien Frougier · Albany, US
• Kangguo Cheng · Schenectady, US
• Adra Carr · Albany, US
• Nicolas Loubet · Guilderland, US

Key dates

• Filing date: May 30, 2018
• Grant date: Apr 30, 2019
• Expiry date: May 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0193
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Structures for a field-effect transistor and methods of forming structures for a field-effect transistor. A first field-effect transistor has a first source/drain region, and a second field-effect transistor has a second source/drain region. A first silicide layer is arranged to wrap around the first source/drain region, and a second silicide layer is arranged to wrap around the second source/drain region. The first silicide layer contains a first metal, and the second silicide layer contains a second metal different from the first metal.