Patent · US Active

LDMOS transistor structure and method of manufacture

US10304789B2 · kind B2 · utility

0Cited by

16References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Helmut Brech · Lappersdorf, DE
Albert Birner · Regensburg, DE
Matthias Zigldrum · Regensburg, DE
Michaela Braun · Regensburg, DE
Jan Ropohl · Regensburg, DE

Key dates

Filing date	May 22, 2018
Grant date	May 28, 2019
Priority date	—
Expiry date	May 22, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a method includes forming a first opening in a front surface of a semiconductor substrate including a LDMOS transistor structure, and covering the first opening with a first layer to form an enclosed cavity defined by material of the semiconductor substrate and the first layer. The material of the first layer lines sidewalls of the enclosed cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.