Patent · US Active

Creating ion energy distribution functions (IEDF)

US10312048B2 · kind B2 · utility

39Cited by

13References

19Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Leonid Dorf · San Jose, US
Travis Koh · Sunnyvale, US
Olivier Luere · Sunnyvale, US
Olivier Joubert · Meylan, FR
Philip Allan Kraus · San Jose, US
Rajinder Dhindsa · Pleasanton, US
James Rogers · Milpitas, US

Key dates

Filing date	Dec 7, 2017
Grant date	Jun 4, 2019
Priority date	—
Expiry date	Dec 7, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01J37/32715
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.