Ni:NiGe:Ge selective etch formulations and method of using same
US10340150B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Dec 16, 2014 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/246
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.